Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices
US9419000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2014 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Nov 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.