Method for forming cell contact
US9419001B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2016 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jan 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A method for forming a cell contact. A substrate having first and second protruding structures is prepared. An etch stop layer is deposited over the substrate. A sacrificial layer is deposited on the etch stop layer. The sacrificial layer is recessed. Spacers are formed on the top surface of the sacrificial layer. A portion of the sacrificial layer not covered by the spacers is etched away, thereby forming a recess. A gap filling material layer is deposited into the recess. An upper portion of the gap filling material layer and the spacers are removed to expose the top surface of the sacrificial layer. The sacrificial layer is removed to form contact holes. A punch etching process is performed to remove the etch stop layer from bottoms of the contact holes. The contact holes is filled up with a conductive material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.