Inventor · Taipei, TW

Sheng-Wei Yang

28Patents
4h-index
36Co-inventors
63Inventor score

Filing activity: May 11, 1993 → Sep 19, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6946359B2 Method for fabricating trench isolations with high aspect ratio Electricity 13 Expired
US5320792A Process for the preparation of LAS ceramic sintered bodies Chemistry; Metallurgy 7 Expired
US9041099B2 Single-sided access device and fabrication method thereof Electricity 6 Active
US9117759B2 Methods of forming bulb-shaped trenches in silicon Electricity 5 Active
US7074700B2 Method for isolation layer for a vertical DRAM Electricity 4 Expired
US10811365B2 Semiconductor devices having crack-inhibiting structures Electricity 3 Active
US8415728B2 Memory device and method of fabricating the same Electricity 3 Active
US10784212B2 Semiconductor devices having crack-inhibiting structures Emerging Cross-Sectional Technologies 3 Active
US10854514B2 Microelectronic devices including two contacts Electricity 2 Active
US6897108B2 Process for planarizing array top oxide in vertical MOSFET DRAM arrays Electricity 2 Expired
US11488981B2 Array of vertical transistors and method used in forming an array of vertical transistors Electricity 2 Active
US8426925B2 Memory device and method of fabricating the same Electricity 2 Active
US8658538B2 Method of fabricating memory device Electricity 1 Active
US11444037B2 Semiconductor devices having crack-inhibiting structures Emerging Cross-Sectional Technologies 1 Active
US9419001B1 Method for forming cell contact Electricity 1 Active
US8901631B2 Vertical transistor in semiconductor device and method for fabricating the same Electricity 1 Active
US6927123B2 Method for forming a self-aligned buried strap in a vertical memory cell Electricity 1 Expired
US10388564B2 Method for fabricating a memory device having two contacts Electricity 1 Active
US11903183B2 Conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices Electricity 0 Active
US9012303B2 Method for fabricating semiconductor device with vertical transistor structure Electricity 0 Active
US11848282B2 Semiconductor devices having crack-inhibiting structures Emerging Cross-Sectional Technologies 0 Active
US8334196B2 Methods of forming conductive contacts in the fabrication of integrated circuitry Electricity 0 Active
US12336288B2 Array of vertical transistors and method used in forming an array of vertical transistors Electricity 0 Active
US10891410B1 User-defined rule engine Emerging Cross-Sectional Technologies 0 Active
US8647988B2 Memory device and method of fabricating the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.