Junctionless tunnel FET with metal-insulator transition material

US9419016B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mohit Bajaj · Savanuru, IN
• Suresh Gundapaneni · Bengaluru, IN
• Aniruddha Konar · Bengaluru, IN
• Kota V. R. M. Murali · Bengaluru, IN
• Edward J. Nowak · South Burlington, US

Key dates

• Filing date: Nov 10, 2014
• Grant date: Aug 16, 2016
• Expiry date: Nov 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N99/03

Abstract

Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer.