Patent · US Active

Recessed contact to semiconductor nanowires

US9419086B2 · kind B2 · utility

0Cited by

2References

24Claims

0Family size

Assignee

SOL VOLTAICS AB · SE

Inventors

Ingvar ÅBERG · Lund, SE
Martin Magnusson · Malmö, SE
Damir Asoli · Malmö, SE
Lars Samuelson · Malmö, SE
Jonas Ohlsson · Malmö, SE

Key dates

Filing date	Mar 27, 2015
Grant date	Aug 16, 2016
Priority date	—
Expiry date	Mar 27, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/932
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.