Bipolar junction transistor formed on fin structures
US9419087B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2013 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Apr 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A Bipolar Junction Transistor (BJT) includes an elongated collector line, an elongated emitter line parallel to the collector line, and an elongated base line parallel to the collector line and positioned between the collector line and the base line. The emitter line, the base line, and the collector line are formed over fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.