Termination for SiC trench devices
US9419092B2 · kind B2 · utility
8Cited by
95References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2006 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jul 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/311
Abstract
A silicon carbide device has a termination region that includes a mesa region that links the termination region to an active area of the device and that includes one or more trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.