Semiconductor structure and method for manufacturing the same

US9419108B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qingqing Liang · Fishkill, US
• Huicai Zhong · San Jose, US
• Huilong Zhu · Poughkeepsie, US
• Chao Zhao · Thuwal, SA
• Tianchun Ye · Beijing, CN

Key dates

• Filing date: Aug 17, 2012
• Grant date: Aug 16, 2016
• Expiry date: Aug 17, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6215

Abstract

One embodiment of present invention provides a method for manufacturing a semiconductor structure, which comprises: forming a gate stack on a semiconductor substrate and removing parts of the substrates situated on two sides of the gate stack; forming sidewall spacers on sidewalls of the gate stack and on sidewalls of the part of the substrate under the gate stack; forming doped regions in parts of the substrate on two sides of the gate stack, and forming a first dielectric layer to cover the entire semiconductor structure; selectively removing parts of the gate stack and parts of the first dielectric layer to form a channel region opening and source/drain region openings; forming a high K dielectric layer on sidewalls of the channel region opening; and implementing epitaxy process to form a continuous fin structure that spans across the channel region opening and the source/drain region openings.