Tunnel field-effect transistor
US9419114B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 16, 2015 |
| Grant date | Aug 16, 2016 |
| Priority date | — |
| Expiry date | Jan 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/292
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tunnel field-effect transistor (TFET) device is provided comprising a semiconductor substrate and a fin structure disposed thereon. The fin structure comprises a channel region and a source region disposed on the channel region. The TFET further comprises a drain region contacting the channel region, wherein the source region and the drain region are of opposite conductivity type. The TFET also comprises a pocket layer covering a gate interface portion of the source region and contacting at least part of the channel region. The TFET further comprises a gate dielectric layer covering the pocket layer and a gate electrode covering the gate dielectric layer. The gate interface portion of the source region comprises at least three mutually non-coplanar surface segments. A method for manufacturing such a TFET device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.