Anne Vandooren
7Patents
4h-index
22Co-inventors
53Inventor score
Filing activity: Jul 26, 2002 → Sep 12, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6838322B2 | Method for forming a double-gated semiconductor device | Electricity | 176 | Expired |
| US8415209B2 | Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device | Electricity | 28 | Active |
| US6951783B2 | Confined spacers for double gate transistor semiconductor fabrication process | Electricity | 15 | Expired |
| US6753216B2 | Multiple gate transistor employing monocrystalline silicon walls | Electricity | 6 | Expired |
| US6689676B1 | Method for forming a semiconductor device structure in a semiconductor layer | Electricity | 1 | Expired |
| US10367031B2 | Sequential integration process | Electricity | 1 | Active |
| US9419114B2 | Tunnel field-effect transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.