Method for measuring positions of structures on a mask and thereby determining mask manufacturing errors
US9424636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2015 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Mar 10, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention discloses a method for measuring positions of structures on a mask and thereby determining mask manufacturing errors. It is shown, that from a plurality measurement sites an influence of an optical proximity effect on a position measurement of structures on the mask, is determined with a metrology tool. A rendered image of the data representation of the structures is obtained. Additionally, at least one optical image of the pattern within the area on the mask is captured with the imaging system of the metrology tool. The field of view of the metrology tool is approximately identical to the size of the selected area of the mask design data. Finally, a residual is determined, which shows the manufacturing based proximity effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.