Systems and methods for a thin film capacitor having a composite high-K thin film stack
US9424993B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 24, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.