Depression filling method and processing apparatus
US9425073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2014 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B19/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.