Semiconductor devices having contacts with intervening spacers and method for fabricating the same
US9425148B2 · kind B2 · utility
0Cited by
2References
20Claims
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Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, and a method for fabricating the same, include an interlayer dielectric film pattern over a substrate, a first wiring within the interlayer dielectric film pattern and having a first length in a first direction, a second wiring within the interlayer dielectric film pattern and separated from the first wiring, and a spacer contacting the first wiring and the second wiring. The spacer electrically separates the first wiring and the second wiring from each other. The second wiring has a second length different from the first length in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.