Image sensors with organic photodiodes and methods for forming the same
US9425240B2 · kind B2 · utility
3Cited by
1References
19Claims
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Key dates
| Filing date | Aug 28, 2013 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Aug 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/20
Abstract
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.
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