Structures of and methods of fabricating split gate MIS devices
US9425305B2 · kind B2 · utility
8Cited by
54References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2010 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jun 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.