Patent · US Active

Source/drain contacts for non-planar transistors

US9425316B2 · kind B2 · utility

3Cited by

10References

19Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Sameer Pradhan · Campbell, US
Subhash M. Joshi · Hillsboro, US
Jin-Sung Chun · Seongnam-si, KR

Key dates

Filing date	Dec 17, 2015
Grant date	Aug 23, 2016
Priority date	—
Expiry date	Dec 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.