Through silicon via including multi-material fill
US9425328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Aug 23, 2016 |
| Priority date | — |
| Expiry date | Jan 9, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2207/096
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.