Method for estimating patterns to be printed on a plate or mask by means of electron-beam lithography and corresponding printing device
US9430597B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Nov 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This method for estimating patterns (M′PF,D′PF) to be printed by means of electron-beam lithography, comprises the following steps: printing (100), in a resin, a set of calibration patterns (MCF, DCF); measuring (120) characteristic dimensions (CD) of this set; supplying an estimation (140) of the point spread function (PSF) based on the characteristic dimensions (CD) measured; estimating (160) the patterns (M′PF,D′PF) to be printed by convoluting the point spread function (PSF) supplied with an initial value of the patterns (MPF,DPF).Furthermore, each calibration pattern printed includes a central zone exposed to the electron beam and a plurality of surrounding concentric zones with rotational symmetry. The characteristic dimensions measured are characteristic dimensions (CD) of the central zones of the patterns. The estimation of the point spread function (PSF) is calculated by inverting analytical modelling of the effect, on these characteristic dimensions, of applying the first point spread function portion (PSFBE) characterising electrons back-scattered by the substrate to the set of calibration patterns (MCF, DCF).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.