Substrate processing apparatus and substrate processing system
US9431220B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus may include a process chamber configured to accommodate a substrate having a metal film polished on a first insulating film and a second insulating film polished on the metal film; a process gas supply part configured to supply a process gas to the substrate; an activation part configured to activate the process gas; a computation part configured to compute processing data for adjusting a film thickness distribution of a stacked insulating film having the polished second insulating film and a third insulating film by adjusting a film thickness distribution of the third insulating film based on the film thickness distribution data of the polished second insulating film; and a control part configured to control the process gas supply part and the activation part to adjust the film thickness distribution of the stacked insulating film based on the processing data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.