Semiconductor device and method for fabricating the same
US9431239B1 · kind B1 · utility
1Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jul 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.