Method of manufacturing semiconductor device
US9431285B2 · kind B2 · utility
1Cited by
2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.