Nanowire and method of fabricating the same
US9431483B1 · kind B1 · utility
12Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Mar 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.