β-Ga2O3-based single crystal substrate
US9431489B2 · kind B2 · utility
2Cited by
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8Claims
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Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A β-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm−2. The average dislocation density may be not more than 6.14×104 cm−2. The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.