Confined semi-metal field effect transistor
US9431529B2 · kind B2 · utility
2Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Feb 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
Abstract
Exemplary embodiments are disclosed for a semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the contact region and the semiconductor terminal that transitions from a substantially zero gap semi-metal beginning at an interface of the contact region into a semiconductor with an energy band gap towards the semiconductor terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.