Method for producing an optoelectronic component, and an optoelectronic component
US9431580B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Mar 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.