Resistive random access memory (RRAM) and method of making

US9431604B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Yu-Wen Liao · New Taipei, TW
• Wen-Ting Chu
• Kuo-Chi Tu · Baoshan, TW
• Chin-Chieh Yang · New Taipei, TW
• Chih-Yang Chang · 員林市, TW
• Hsia-Wei Chen · Taipei, TW

Key dates

• Filing date: Dec 14, 2012
• Grant date: Aug 30, 2016
• Expiry date: Oct 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure electrically connected to the transistor. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer over the bottom electrode and having a same width as the top portion of the bottom electrode, and a top electrode over the resistive material layer and having a smaller width than the resistive material layer.