Hybrid non-volatile memory device and method for manufacturing such a device
US9431608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Oct 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a hybrid non-volatile memory device includes forming first conductive pads; depositing a first conductive layer on a second area of the substrate; etching the first conductive layer to obtain second conductive pads, the second conductive pads having a section at their base smaller than at their top; protecting the upper face of the second conductive pads; oxidizing the substrate so that an insulating material layer covers the upper face of the first conductive pads and sides of the second conductive pads; depositing an oxide layer at the tops of the first conductive pads, resulting in memory elements of a first type supported by the first conductive pads; and forming memory elements of a second type at the tops of the second conductive pads. Each memory element of the second type is supported by one of the second conductive pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.