Oxide film scheme for RRAM structure
US9431609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2014 |
| Grant date | Aug 30, 2016 |
| Priority date | — |
| Expiry date | Sep 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
The present disclosure relates to a method of forming an RRAM cell having a dielectric data layer that provides good performance, device yield, and data retention, and an associated apparatus. In some embodiments, the method is performed by forming an RRAM film stack having a bottom electrode layer disposed over a semiconductor substrate, a top electrode layer, and a dielectric data storage layer disposed between the bottom electrode and the top electrode. The dielectric data storage layer has a performance enhancing layer with a hydrogen-doped oxide and a data retention layer having an aluminum oxide. The RRAM film stack is then patterned according to one or more masking layers to form a top electrode and a bottom electrode, and an upper metal interconnect layer is formed at a position electrically contacting the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.