Cap, semiconductor device including the cap, and manufacturing method therefor
US9434604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24322
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A cap for installing a semiconductor device that can send or receive a light having a predetermined wavelength, the cap including a recess for installing the semiconductor device, the recess being defined by a through-hole penetrating an upper surface of a silicon substrate and a lower surface of the silicon substrate, the through-hole having an upper end part of the through-hole on a side of the upper surface of the silicon substrate and a lower end part of the through-hole on a side of the lower surface of the silicon substrate, and a coating film formed to cover the upper surface of the silicon substrate and the upper end part of the through-hole, wherein the coating film that covers the upper end part of the through-hole is a window part that transmits the light having a predetermined wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.