Wafer chucking system for advanced plasma ion energy processing systems
US9435029B2 · kind B2 · utility
87Cited by
56References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 28, 2011 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Apr 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.