Stripping solution for photolithography and pattern formation method
US9436094B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2013 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/426
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.