Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration
US9437428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Nov 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.