Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method
US9437429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2012 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02532
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a<b<c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.