Self-compensating oxide layer
US9437432B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of conformally doping a device on a semiconductor workpiece is disclosed. An oxide layer is applied to all surfaces of the device. Further, the thickness of the oxide layer on each surface is proportional to the energy that ions impact that particular surface. For example, ions strike the horizontal surfaces at nearly a normal angle and penetrate more deeply into the workpiece than ions striking the vertical surfaces. After creating an oxide layer that has a variable thickness, a subsequent dopant implant is performed. While ions strike the horizontal surfaces with more energy, these ions pass through a thicker oxide layer to penetrate the workpiece. In contrast, ions strike the vertical surfaces with less energy, but traverse a much thinner oxide layer to penetrate the workpiece. The result is a conformally doped device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.