Patent · US Active

Interconnect structure and method of fabricating same

US9437564B2 · kind B2 · utility

9Cited by
20References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 9, 2013
Grant dateSep 6, 2016
Priority date
Expiry dateJul 9, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/351
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A structure comprises a passivation layer formed over a semiconductor substrate, a connection pad enclosed by the passivation layer, a redistribution layer formed over the passivation layer, wherein the redistribution layer is connected to the connection pad, a bump formed over the redistribution layer, wherein the bump is connected to the redistribution layer and a molding compound layer formed over the redistribution layer. The molding compound layer comprises a flat portion, wherein a bottom portion of the bump is embedded in the flat portion of the molding compound layer and a protruding portion, wherein a middle portion of the bump is surrounded by the protruding portion of the molding compound layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.