Electronic component manufacturing method and electrode structure
US9437702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.