Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same
US9437704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Feb 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.