Method for manufacturing semiconductor device having grooved surface
US9437719B2 · kind B2 · utility
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14Claims
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Assignee
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Key dates
| Filing date | Feb 12, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Feb 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technology for reducing contact resistance between a semiconductor substrate and an electrode is provided. A provided method for manufacturing a semiconductor device includes: forming an oxide film 62 on a surface 12b of a semiconductor substrate 12 by bringing the surface 12b into contact with ammonia-hydrogen peroxide water mixture; forming a groove 60 on the surface 12b by irradiating light to heat the surface 12b covered with the oxide film 62; removing the oxide film 62 to expose the surface 12b; and forming an electrode 16 on the exposed surface 12b.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.