High-density power MOSFET with planarized metalization
US9437729B2 · kind B2 · utility
1Cited by
94References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2007 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Oct 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a power MOSFET. The method includes fabricating a plurality of layers of a power MOSFET to produce an upper surface active area and performing a chemical mechanical polishing process on the active area to produce a substantially planar surface. A metalization deposition process is then performed on the substantially planar surface and the fabrication of the power MOSFET is subsequently completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.