Non-volatile semiconductor memory device
US9437736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Mar 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/694
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile semiconductor memory device, it is only necessary that, at the time of data writing, a voltage drop is caused in a high resistance region. Therefore, the value of voltage applied to a gate electrode can be reduced as compared with a conventional device. In correspondence with the reduction in the value of applied voltage, it is possible to reduce the film thickness of a gate insulating film of memory transistors, and further the film thickness of the gate insulating film of a peripheral transistor for controlling the memory transistors. As a result, the circuit configuration of the non-volatile semiconductor memory device can be reduced in size as compared with the conventional device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.