Patent · US Active

Light emitting diodes including integrated backside reflector and die attach

US9437785B2 · kind B2 · utility

2Cited by
14References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 10, 2009
Grant dateSep 6, 2016
Priority date
Expiry dateJun 21, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/819

Abstract

Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.