Light emitting diodes including integrated backside reflector and die attach
US9437785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2009 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.