Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof
US9438184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.