Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US9443718B2 · kind B2 · utility
11Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2013 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Dec 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method including forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen, and supplying a reactive gas to the substrate wherein the reactive gas contains the at least one element selected from the group consisting of nitrogen, carbon and boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.