Method of fabricating semiconductor device
US9443732B1 · kind B1 · utility
0Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Aug 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method may include forming a plurality of fins on a substrate with first and second regions, forming a photoresist pattern to expose the fins of the first region, forming a material layer to cover the fins of first region and the photoresist pattern, chemically reacting the photoresist pattern the material layer to form a supplemental film on a side surface of the photoresist pattern, performing an ion implantation process using the photoresist pattern and the supplemental film as a ion injection mask to form impurity layers in the fins of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.