Method of manufacturing semiconductor device
US9443735B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jul 28, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jul 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.