Patent · US Active

Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body

US9443759B2 · kind B2 · utility

0Cited by

6References

11Claims

0Family size

Assignee

AMS AG · AT

Inventors

Rainer Minixhofer · Kufstein, AT
Ewald Stückler · Unterpremstätten, AT
Martin Schrems · Langenbruck, DE
Günther Koppitsch · Lieboch, AT
Jochen Kraft · Bruck an der Mur, AT
Jordi Teva · Eindhoven, NL

Key dates

Filing date	May 16, 2012
Grant date	Sep 13, 2016
Priority date	—
Expiry date	May 21, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A cutout (11), which penetrates the semiconductor body, is present in the semiconductor body (1). A conductor layer (6), which is electrically conductively connected to a metal plane (3) on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (6a), or a doped region of the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.