Low temperature high strength metal stack for die attachment
US9443903B2 · kind B2 · utility
5Cited by
42References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2012 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.