Semiconductor device and method of fabricating the same
US9443932B2 · kind B2 · utility
0Cited by
5References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 14, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Aug 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.