Transistor having metal diffusion barrier
US9443969B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jul 23, 2013 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Dec 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.